| 摘要 |
The present invention provides a target material which suppresses contamination of a gate electrode during sputtering and which is used to form a gate electrode capable of achieving stable TFT characteristics. This target material contains a total of 50 atom% or more of one or more elements M selected from among the group consisting of W, Nb, Ta, Ni, Ti and Cr, with the remainder comprising Mo and unavoidable impurities, wherein the content of K, which is one of the unavoidable impurities, is preferably 0.4-20.0 ppm by mass and the content of W as element M is preferably 10-50 atom%. |
