| 摘要 |
According to an embodiment, a semiconductor light emitting device includes a semiconductor layer (15), a p-side electrode (16), n-side electrode (17) and a resin layer (30). The semiconductor layer (15) has a first face (15a) and a second face (15b) opposite to the first face (15a), and includes a light emitting layer (14). The p-side electrode (16) is provided on the semiconductor layer (15) on the second face side (15b). The n-side electrode (17) is provided on the semiconductor layer (15) on the second face side (15b). The resin layer (30) is provided on the first face (15a) and transmits light emitted from the light emitting layer (13), the resin layer (30) including a top surface (30a) opposite to the first face (15a) and four side faces (30b) provided along an outer edge of the first face (15a) and connected to the top surface (30a), the resin layer (30) including a scattering substance (32) scattering the light emitted from the light emitting layer (13). |
