发明名称 ELECTRONIC DEVICES
摘要 A method for forming a transistor comprising: depositing an electrically conductive layer onto a substrate; embossing the substrate and the conductive layer such that a portion of the conductive layer is pushed into the substrate thereby forming a depressed region and electrically insulating the portion of the conducting layer in the depressed region from the remaining at least one region of the electrically conductive layer; at least one portion of the conductive layer forming an electrode of the transistor.
申请公布号 EP1581974(B1) 申请公布日期 2017.02.01
申请号 EP20030767995 申请日期 2003.12.12
申请人 Flexenable Limited 发明人 BROWN, Thomas Meredith;SIRRINGHAUS, Henning
分类号 H01L51/40;H01L21/762;H01L51/00;H01L51/05;H01L51/10;H01L51/30 主分类号 H01L51/40
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