发明名称 Two-dimensional chalcogenide-based materials, methods of forming the same, and devices including the two-dimensional chalcogenide-based materials
摘要 According to example embodiments, a two-dimensional (2D) material element may include a first 2D material and a second 2D material chemically bonded to each other. The first 2D material may include a first metal chalcogenide-based material. The second 2D material may include a second metal chalcogenide-based material. The second 2D material may be bonded to a side of the first 2D material. The 2D material element may have a PN junction structure. The 2D material element may include a plurality of 2D materials with different band gaps.
申请公布号 EP2869348(B1) 申请公布日期 2017.02.01
申请号 EP20140191648 申请日期 2014.11.04
申请人 Samsung Electronics Co., Ltd 发明人 Shin, Hyeonjin;Park, Seongjun;Lee, Jaeho;Heo, Jinseong
分类号 H01L29/778;H01L29/06;H01L29/10;H01L29/22;H01L29/221;H01L29/24;H01L29/73;H01L29/735;H01L29/737;H01L29/861;H01L31/032 主分类号 H01L29/778
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