| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a group 13 nitride crystal having enlarged c surface.SOLUTION: A method for manufacturing a group 13 nitride crystal comprises: a dissolution step for dissolving nitrogen into a melt mixture 24 in a reaction vessel 52 holding the melt mixture 24 containing at least one of alkali metal and alkali earth metal and group 13 metal, a seed crystal 30 of hexagonal structure placed in the melt mixture 24 having m surface and a suppression member 32 for suppressing a transition of +c axial end of the m surface to -c axial direction or a transition of -c axial end of the m surface to +c axial direction accompanied with a crystal growth of the seed crystal 30; and a crystallization step for growing the nitride crystal on the seed crystal 30. |
