发明名称 |
COMPOSITION FOR FORMING CERIUM-DOPED PZT PIEZOELECTRIC FILM |
摘要 |
A composition for forming a Ce-doped PZT-based piezoelectric film contains: PZT-based precursors containing metal atoms configuring the composite metal oxides; a diol; and polyvinylpyrrolidone. The PZT-based precursors are contained so that a metal atom ratio (Pb:Ce:Zr:Ti) in the composition satisfies (1.00 to 1.28):(0.005 to 0.05):(0.40 to 0.55):(0.60 to 0.45) and the total of Zr and Ti in a metal atom ratio is 1. A concentration of the PZT-based precursor in 100 mass% of the composition is from 17 mass% to 35 mass% in terms of an oxide concentration, a rate of diol in 100 mass% of the composition is from 16 mass% to 56 mass%, and a molar ratio of polyvinylpyrrolidone to I mole of the PZT-based precursor is 0.01 moles to 0.25 moles in terms of monomers. |
申请公布号 |
EP3125314(A1) |
申请公布日期 |
2017.02.01 |
申请号 |
EP20150767978 |
申请日期 |
2015.03.20 |
申请人 |
Mitsubishi Materials Corporation |
发明人 |
DOI, Toshihiro;SAKURAI, Hideaki;SOYAMA, Nobuyuki |
分类号 |
H01L41/187;C01G25/00;H01L41/318 |
主分类号 |
H01L41/187 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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