| 摘要 |
A silicon carbide semiconductor device (1) includes a silicon carbide substrate (10) and a gate insulating film (15). The silicon carbide substrate (10) includes a first impurity region (12), a second impurity region (13), and a third impurity region (14). The first impurity region (12) includes: a first region (12a) in contact with the second impurity region (13); a second region (12b) that is in contact with the first region (12a), that is located opposite to the second impurity region (13) when viewed from the first region (12a), and that has an impurity concentration higher than an impurity concentration of the first region (12a); and a third region (12c) that is in contact with the second region (12b), that is located opposite to the first region (12a) when viewed from the second region (12b), and that has an impurity concentration lower than the impurity concentration of the second region (12b). The gate insulating film (15) is in contact with the first region (12a), the second impurity region (13), and the third impurity region (14) at a side portion (SW) of a trench (TR). There are provided a silicon carbide semiconductor device having reduced on resistance and improved breakdown voltage as well as a method for manufacturing the silicon carbide semiconductor device. |
