| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for making an SiC single crystal having little threading edge dislocation, and the SiC single crystal.SOLUTION: The method for making an SiC single crystal having little threading edge dislocation is provided which uses 4H-SiC or 6H-SiC as an SiC seed crystal, and which includes growing an SiC single crystal on the (0001) plane and developing a step in at least one direction selected from among (1) to (3) described below and on a threading edge dislocation: (1); a direction at an intersection angle of -30° or more and less than +30° to the [-1-120] orientation or a direction at an intersection angle of -30° or more and less than +30° with respect to the [11-20] orientation, (2); a direction at an intersection angle of -30° or more and less than +30° to the [-2110] orientation or a direction at an intersection angle of -30° or more and less than +30° to the [2-1-10] orientation, and (3); a direction at an intersection angle of -30° or more and less than +30° to the [-12-10] orientation or a direction at an intersection angle of -30° or more and less than +30° to the [1-210] orientation. |
