| 发明名称 |
METHOD FOR MANUFACTURING AN IMPROVED GAN SEMICONDUCTOR LAYER |
| 摘要 |
The invention relates to a post-activation method of dopants in a doped and activated GaN-base semiconductor layer, including the following successive steps: providing said doped and activated substrate, eliminating a part of the semiconductor material layer. |
| 申请公布号 |
EP3001446(B1) |
申请公布日期 |
2017.02.01 |
| 申请号 |
EP20150184352 |
申请日期 |
2015.09.08 |
| 申请人 |
Commissariat à l'Energie Atomique et aux Energies Alternatives |
发明人 |
Agraffeil, Claire |
| 分类号 |
H01L21/20;H01L21/22;H01L21/265;H01L21/324 |
主分类号 |
H01L21/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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