| 摘要 |
A probe apparatus of inspecting electrical characteristics of a power device having electrodes on both sides of a substrate at wafer level can reduce and uniformize a contact resistance between the electrode on a rear surface of the substrate and a mounting surface conductor of a chuck top. In the probe apparatus, an attracting device supports a semiconductor wafer W on the chuck top 12, and has many vertical fine holes in a pattern (diameter Æ and pitch p) that satisfies the condition of Æ < p ‰¤ 2Æ. For example, the diameter Æ is about 0.25 mm, and the pitch p is about 0.5 mm. |
