Semiconductor light emitting device, nitride semiconductor layer, and method for forming nitride semiconductor layer

摘要

According to an embodiment, a semiconductor light emitting device (110, 111, 112) includes a foundation layer (60), a first semiconductor layer (10), a light emitting layer (30), and a second semiconductor layer (20). The foundation layer (60) has an unevenness (61) having recesses (61d), side portions (61 s), and protrusions (61p). A first major surface (60a) of the foundation (60) layer has an overlay-region. The foundation layer (60) has a plurality of dislocations (65) including first dislocations whose one ends reaching the recess (61d) and second dislocations whose one ends reaching the protrusion (61 p). A proportion of a number of the second dislocations reaching the first major surface (60a) to a number of all of the second dislocations is smaller than a proportion of a number of the first dislocations reaching the first major surface (60a) to a number of all of the first dislocations. A number of the dislocations (65) reaching the overlay-region of the first major surface (60a) is smaller than a number of all of the first dislocations.