发明名称 |
RAMPING INHIBIT VOLTAGE DURING MEMORY PROGRAMMING |
摘要 |
The inhibit voltage is a voltage applied to wordlines adjacent to a program wordline having a memory cell to write during the program operation. The inhibit voltage for a program operation can be ramped up during the program pulse. Instead of applying a constant high inhibit voltage that results in the initial boosted channel potential reducing drastically due to leakage, a system can start the inhibit voltage lower and ramp the inhibit voltage up during the program pulse. The ramping up can be a continuous ramp or in finite discrete steps during the program pulse. Such ramping of inhibit voltage can provide better tradeoff between program disturb and inhibit disturb. |
申请公布号 |
EP3123478(A1) |
申请公布日期 |
2017.02.01 |
申请号 |
EP20150767747 |
申请日期 |
2015.03.27 |
申请人 |
Intel Corporation |
发明人 |
RAJWADE, Shantanu;KALAVADE, Pranav;MIELKE, Neal;PARAT, Krishna;RAGHUNATHAN, Shyam Sunder |
分类号 |
G11C16/34;G11C16/06 |
主分类号 |
G11C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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