| 摘要 |
PROBLEM TO BE SOLVED: To inhibit deterioration in transistor characteristics of a MISFET which uses a group III-V compound semiconductor.SOLUTION: A semiconductor device manufacturing method comprises the step of epitaxially growing a nitride semiconductor by epitaxially lateral overgrowth (ELO) which uses an insulation layer 102a as a selective growth mask, from a region where a surface of a part of a first semiconductor layer 101 is exposed to form a second semiconductor layer 103 to be a channel on the insulation layer 102a. For example, by an organic metal vapor growth (MOCVD), p-type impurity-introduced GaN (p-type nitride semiconductor) is grown by ELO and the second semiconductor layer 103 is formed so as to cover the insulation layer 102a. |
