发明名称 半導体駆動装置
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor driving device capable of assuring stable operation of a semiconductor switching element by preventing occurrence of a malfunction caused by a gate capacity of the semiconductor switching element and the like.SOLUTION: A semiconductor driving device comprises: an overcurrent detection terminal which detects current flowing in a semiconductor switching element; a gate interruption circuit which interrupts driving of the semiconductor switching element when the current flowing in the semiconductor switching element exceeds a preset current value; and a current limit circuit which decreases a gate voltage of the semiconductor switching element according to the current flowing in the semiconductor switching element. The semiconductor driving device further comprises a first switching circuit which is conductively connected to apply an internal power supply voltage to the overcurrent detection terminal particularly when the gate voltage of the semiconductor switching element is lower than a first threshold voltage and a second switching circuit which is conductively connected to clamp the voltage of the overcurrent detection terminal with the gate voltage when the gate voltage exceeds a second threshold voltage.
申请公布号 JP6070003(B2) 申请公布日期 2017.02.01
申请号 JP20120206829 申请日期 2012.09.20
申请人 富士電機株式会社 发明人 竹内 亨
分类号 H02M1/08 主分类号 H02M1/08
代理机构 代理人
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