| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing method for performing a plasma etching by use of depositing gas such as fluorocarbon gas or SiFgas which makes possible to control the film thickness of a deposit accumulated on a mask.SOLUTION: A plasma processing method for performing a plasma etching a film to be etched by use of depositing gas comprises the steps of: measuring the thickness of a deposit film accumulated on a mask; determining a difference between the measured deposit film thickness and a target value of the deposit film thickness; and if the determined difference is larger than an allowable value, etching the film to be etched so that the determined difference falls within the allowable value while controlling an etching parameter. |
