发明名称 |
PHOTOMASK BLANK AND METHOD FOR PREPARING PHOTOMASK |
摘要 |
In a photomask blank comprising a transparent substrate, a resistance layer, and a conductive layer, the resistivity and thickness of the conductive layer and the resistivity and thickness of the resistance layer are selected so as to meet a specific equation (1). In EB lithography, a ground can be established at a necessary fully low resistance value, and EB writing be carried out at a high accuracy. |
申请公布号 |
EP3125041(A1) |
申请公布日期 |
2017.02.01 |
申请号 |
EP20160178198 |
申请日期 |
2016.07.06 |
申请人 |
Shin-Etsu Chemical Co., Ltd. |
发明人 |
SASAMOTO, Kouhei;FUKAYA, Souichi;INAZUKI, Yukio |
分类号 |
G03F1/22;G03F1/78 |
主分类号 |
G03F1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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