发明名称 PHOTOMASK BLANK AND METHOD FOR PREPARING PHOTOMASK
摘要 In a photomask blank comprising a transparent substrate, a resistance layer, and a conductive layer, the resistivity and thickness of the conductive layer and the resistivity and thickness of the resistance layer are selected so as to meet a specific equation (1). In EB lithography, a ground can be established at a necessary fully low resistance value, and EB writing be carried out at a high accuracy.
申请公布号 EP3125041(A1) 申请公布日期 2017.02.01
申请号 EP20160178198 申请日期 2016.07.06
申请人 Shin-Etsu Chemical Co., Ltd. 发明人 SASAMOTO, Kouhei;FUKAYA, Souichi;INAZUKI, Yukio
分类号 G03F1/22;G03F1/78 主分类号 G03F1/22
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