发明名称 PASSAGE MEMBER AND SEMICONDUCTOR MODULE
摘要 There are provided a flow passage member having excellent heat dissipation properties and a semiconductor module in which a semiconductor device is mounted on a metal layer disposed on the flow passage member. A flow passage member (1) includes a wall formed of ceramics, a space surrounded by the wall being a flow passage (2) through which a fluid flows, a ratio of an area occupied by a grain boundary phase in an inner surface (3a) of a wall part of the wall in which wall part heat exchange is conducted being smaller than a ratio of an area occupied by a grain boundary phase in an outer surface (3b) of the wall part. The flow passage member (1) configured as described above has excellent heat dissipation properties.
申请公布号 EP3125288(A1) 申请公布日期 2017.02.01
申请号 EP20150770292 申请日期 2015.03.25
申请人 KYOCERA Corporation 发明人 ISHIMINE,Yuusaku;KOMATSUBARA,Kenji
分类号 H01L23/373;C04B35/584;H01L23/473;H01L25/07;H01L25/18;H05K1/02 主分类号 H01L23/373
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