发明名称 半導体装置
摘要 A nonvolatile semiconductor device which can be driven at low voltage is provided. A nonvolatile semiconductor device with low power consumption is provided. A Schmitt trigger NAND circuit and a Schmitt trigger inverter are included. Data is held in a period when the supply of power supply voltage is continued, and a potential corresponding to the data is stored at a node electrically connected to a capacitor before a period when the supply of power supply voltage is stopped. By utilizing a change in channel resistance of a transistor whose gate is connected to the node, the data is restored in response to the restart of the supply of power supply voltage.
申请公布号 JP6074488(B2) 申请公布日期 2017.02.01
申请号 JP20150243829 申请日期 2015.12.15
申请人 株式会社半導体エネルギー研究所 发明人 青木 健;黒川 義元;上妻 宗広
分类号 H01L21/8242;H01L27/108 主分类号 H01L21/8242
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