| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can achieve improvement in short-circuit resistance by increasing a voltage drop from a channel region to a source electrode and which can keep contact resistance between the source electrode and a source region low.SOLUTION: A source region 12 of a MOSFET includes: a source-contact region 12a connected to a source pad 41; a source extension region 12b adjacent to a channel region in a well region 20; and a source resistance control region 15a which is connected between the source extension region 12b and the source-contact region 12a and which does not undergo ion implantation. Those three regions are connected in series between the source pad 41 and the channel region in the well region 20. |
