发明名称 |
Light-emitting element, light-emitting element unit, and light-emitting element package |
摘要 |
In a light-emitting element 1, a light-emitting layer 4, a second conductivity type semiconductor layer 5, a transparent electrode layer 6, a reflecting electrode layer 7 and an insulating layer 8 are stacked in this order on a first conductivity type semiconductor layer 3, while a first electrode layer 10 and a second electrode layer 12 are stacked on the insulating layer 8 in an isolated state. The light-emitting element 1 includes a plurality of insulating tube layers 9, discretely arranged in plan view, passing through the reflecting electrode layer 7, the transparent electrode layer 6, the second conductivity type semiconductor layer 5 and the light-emitting layer 4 continuously from the insulating layer 8 and reaching the first conductivity type semiconductor layer 3, first contacts 11, continuous from the first electrode layer 10, connected to the first conductivity type semiconductor layer 3 through the insulating layer 8 and the insulating tube layers 9, and second contacts 13, continuous from the second electrode layer 12, passing through the insulating layer 8 to be connected to the reflecting electrode layer 7. |
申请公布号 |
US9559263(B2) |
申请公布日期 |
2017.01.31 |
申请号 |
US201514856599 |
申请日期 |
2015.09.17 |
申请人 |
ROHM CO., LTD. |
发明人 |
Matsui Nobuaki;Obuchi Hirotaka |
分类号 |
H01L33/40;H01L33/38;H01L33/42;H01L33/44 |
主分类号 |
H01L33/40 |
代理机构 |
Rabin & Berdo, P.C. |
代理人 |
Rabin & Berdo, P.C. |
主权项 |
1. A light-emitting element comprising:
a first conductivity type semiconductor layer; a light-emitting layer stacked on the first conductivity type semiconductor layer; a second conductivity type semiconductor layer stacked on the light-emitting layer; a transparent electrode layer, stacked on the second conductivity type semiconductor layer, transparent with respect to an emission wavelength of light emitted from the light-emitting layer; a reflecting electrode layer, stacked on the transparent electrode layer, reflecting light transmitted through the transparent electrode layer, the reflecting electrode layer being electrically connected to the light-emitting layer; an insulating layer stacked on the reflecting electrode layer; a first electrode layer stacked on the insulating layer; and a second electrode layer stacked on the insulating layer in a state isolated from the first electrode layer, wherein respective regions of the light-emitting layer, the second conductivity type semiconductor layer, the transparent electrode layer and the reflecting electrode layer coincide with one another in a plan view as viewed from a thickness direction of the first conductivity type semiconductor layer. |
地址 |
Kyoto JP |