Substrate removal process for high light extraction LEDs

摘要

A method for fabricating light emitting diode (LEDs) comprises providing a plurality of LEDs on a substrate wafer, each of which has an n-type and p-type layer of Group-III nitride material formed on a SiC substrate with the n-type layer sandwiched between the substrate and p-type layer. A conductive carrier is provided having a lateral surface to hold the LEDs. The LEDs are flip-chip mounted on the lateral surface of the conductive carrier. The SiC substrate is removed from the LEDs such that the n-type layer is the top-most layer. A respective contact is deposited on the n-type layer of each of the LEDs and the carrier is separated into portions such that each of the LEDs is separated from the others, with each of the LEDs mounted to a respective portion of said carrier.

主权项

1. A light emitting diode (LED) device, comprising:
a carrier; a plurality of semiconductor layers comprising at least an n-type layer and a p-type layer and arranged in a flip-chip orientation on said carrier with said n-type layer being exposed as a topmost of said semiconductor layers; and a metal layer structure between said carrier and said p-type layer of said semiconductor layers, said metal layer structure comprising:
an ohmic contact layer having a first surface and a second surface, in which the first surface of the ohmic contact layer is coupled to said p-type layer of said plurality of semiconductor layers, wherein the ohmic contact layer is transparent,a mirror layer having a first surface and a second surface in which the entire first surface of the mirror layer is coupled to the second surface of the ohmic contact layer, anda barrier layer, coupled to said p-type layer, said ohmic contact layer, and said mirror layer, wherein said barrier layer is coupled closer to said carrier than said p-type layer, said ohmic contact layer, and said mirror layer, in which said barrier layer covers and surrounds, in conjunction with said p-type layer, said ohmic contact layer and said mirror layer; wherein said metal layer structure provides light reflection.