| 发明名称 | FinFETs and methods of forming FinFETs | ||
| 摘要 | An embodiment is a method including forming a fin on a substrate, forming a first doped region in a top portion of the fin, the first doped region having a first dopant concentration, and forming a second doped region in a middle and bottom portion of the fin, the second doped region having a second dopant concentration, the second dopant concentration being less than the first dopant concentration. | ||
| 申请公布号 | US9558946(B2) | 申请公布日期 | 2017.01.31 |
| 申请号 | US201414506348 | 申请日期 | 2014.10.03 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Tsai Chun Hsiung;Wang Tsan-Chun |
| 分类号 | H01L21/223;H01L21/336;H01L29/66;H01L29/78;H01L21/02;H01L21/225;H01L21/3115 | 主分类号 | H01L21/223 |
| 代理机构 | Slater Matsil, LLP | 代理人 | Slater Matsil, LLP |
| 主权项 | 1. A method comprising: forming a fin on a substrate; forming a first doped region in a top portion of the fin by a zero degree implantation process, the first doped region having a first dopant concentration; forming a second doped region in a middle and bottom portion of the fin based on a deposited dopant source layer, the second doped region having a second dopant concentration, the second dopant concentration being less than the first dopant concentration; and doping the first doped region with dopant from the dopant source layer. | ||
| 地址 | Hsin-Chu TW | ||