发明名称 Fault analysis apparatus and fault analysis method
摘要 A fault analysis apparatus is an apparatus for measuring a reaction of a semiconductor device having a wiring extending in two directions orthogonal to each other. The fault analysis apparatus comprises a laser light source that outputs laser light, a control unit that sets a scan direction which is a direction of scanning an irradiation position of the laser light in the semiconductor device, a laser scanner that scans the laser light according to the scan direction, an electric signal detector that measures the reaction of the semiconductor device to the laser light and outputs a measured value, and an image processing unit that creates a two-dimensional map according to the irradiation position and the measured value. The control unit sets the scan direction such that the scan direction intersects the wiring extending directions at an angle greater than 0° but smaller than 90°.
申请公布号 US9557377(B2) 申请公布日期 2017.01.31
申请号 US201514637752 申请日期 2015.03.04
申请人 HAMAMATSU PHOTONICS K.K. 发明人 Kaneoka Takayoshi
分类号 G01R31/28;G01N21/00;G01R31/311;G01R31/302;G01N21/84 主分类号 G01R31/28
代理机构 Drinker Biddle & Reath LLP 代理人 Drinker Biddle & Reath LLP
主权项 1. An apparatus for measuring a reaction of a semiconductor device having a wiring extending in two directions orthogonal to each other, the apparatus comprising: a light source configured to output light; a computer configured to set a scan direction which is a direction of scanning an irradiation position of the light in the semiconductor device; a light scanner electrically coupled to the computer and configured to scan the light according to the scan direction; and a detector electrically coupled to the computer and configured to measure the reaction of the semiconductor device irradiated with the light and output a measured value, wherein the computer sets the scan direction such that the scan direction intersects the wiring extending directions at an angle greater than 0° but smaller than 90° and creates a two-dimensional map indicating the reaction of the semiconductor device according to the irradiation position and the measured value by performing a coordinate transformation according to at least an angle of intersection between the scan direction and the wiring extending directions, and the reaction is a change in current value or voltage value.
地址 Hamamatsu-shi, Shizuoka JP