| 发明名称 | Electrochemical sensing well | ||
| 摘要 | A well is formed in a body of dielectric material and has a chamfered edge about a top side of the well. A top electrode layer is on a top face of the body and on the chamfered edge of the well. A bottom electrode is on a floor of the well. | ||
| 申请公布号 | US9557288(B2) | 申请公布日期 | 2017.01.31 |
| 申请号 | US201313873199 | 申请日期 | 2013.04.29 |
| 申请人 | Hewlett-Packard Development Company, L.P. | 发明人 | Abbott, Jr. James Elmer;Long Greg Scott;Delos-Reyes Michael A. |
| 分类号 | C23C14/00;C23C14/32;G01N27/403;C23C14/34 | 主分类号 | C23C14/00 |
| 代理机构 | Rathe Lindenbaum LLP | 代理人 | Rathe Lindenbaum LLP |
| 主权项 | 1. A method comprising: forming an array of open wells in a body, each of the wells having a chamfered edge about a top side of the well; directionally depositing an electrode material on the top surface of the body and the chamfered edge of each of the wells to form a top electrode layer; and providing a bottom electrode on a bottom of the wells, providing a non-conductive sidewall in each of the wells to electrically isolate the top electrode layer from the bottom electrode, the non-conductive sidewall to extend from the bottom electrode to the chamfered edge. | ||
| 地址 | Houston TX US | ||