Thin film transistor substrate and display

摘要

The invention provides a thin film transistor substrate includes: a substrate; and a plurality of transistors, wherein each of the transistors includes a gate electrode disposed on the substrate; a first diffusion barrier layer disposed on the substrate and covering an upper surface and a ring sidewall of the gate electrode; a gate insulating layer disposed on the first diffusion barrier layer; an active layer disposed on the gate insulating layer and over the gate electrode; a source electrode disposed on the substrate and electrically connected to the active layer; a drain electrode disposed on the substrate and electrically connected to the active layer; and a protective layer covering the source electrode and the drain electrode.

主权项

1. A thin film transistor substrate, comprising:
a substrate; and a plurality of thin film transistors disposed on the substrate, wherein each of the thin film transistors comprises: a gate electrode disposed on the substrate; a first layer disposed on the gate electrode and comprising silicon nitride; a second layer disposed on the first layer and comprising silicon oxide, wherein a hydrogen content of the first layer is greater than a hydrogen content of the second layer; a metal oxide layer disposed on the second layer and over the gate electrode; a source electrode disposed on the substrate and electrically connected to the metal oxide layer; a drain electrode disposed on the substrate and electrically connected to the metal oxide layer; and a protective layer covering the source electrode and the drain electrode.