Method of manufacturing nitride semiconductor template

摘要

A method of manufacturing a nitride semiconductor template that includes a base substrate of a sapphire substrate and a nitride semiconductor layer represented by a general formula AlxGa1-xN (0.3≦x≦1) includes: contacting the base substrate with a water vapor atmosphere, nitriding a surface of the base substrate by contacting the base substrate with a nitrogen raw material to form a nitrided area on the surface of the base substrate, and growing a nitride semiconductor layer on the nitrided area.

主权项

1. A method of manufacturing a nitride semiconductor template including a base substrate comprising a sapphire substrate and a nitride semiconductor layer represented by a general formula AlxGa1-xN (0.3≦x≦1), the method comprising:
contacting the base substrate with a water vapor atmosphere, wherein a water vapor concentration in the water vapor atmosphere is in a range of 5 μmol/L to 10 μmol/L; nitriding a surface of the base substrate by contacting the base substrate with a nitrogen raw material to form a nitrided area on a surface of the base substrate; and forming a first nitride semiconductor layer on the nitride area, the first nitride semiconductor layer being made of a group of crystal nucleuses each having an approximately frustum shape, and forming a second nitride semiconductor layer in contact with an upper surface of the first nitride semiconductor layer, the second nitride semiconductor layer having an approximately flat uppermost surface.