Scaling of filament based RRAM

摘要

A solid state memory comprises a top electrode, a bottom electrode and an insulating switching medium that is disposed at a thickness based on a predetermined function. The insulating switching medium generates a conduction path in response to an electric signal applied to the device. The thickness of the insulating switching medium is a function of a filament width of the conduction path and operates to prevent rupture of a semi-stable region. The semi-stable region maintains filament structure over time and does not degrade into retention failure. The solid state memory can comprise one or more conducting layers that can operate to control the conductance at an on-state of the memory and offer oxygen vacancies or metal ions to the switching medium. The function of the thickness of the insulating switching medium can vary depending upon the number of conduction layers disposed at the insulating switching medium.

主权项

1. A method of fabricating a solid state memory cell, comprising:
forming a bottom electrode layer; forming a non-conductive layer as a switching medium above the bottom electrode, the switching medium having a thickness; and forming a top electrode layer opposite to the bottom electrode and above the switching medium, wherein forming the non-conductive layer further comprises selecting the thickness of the switching medium from a function of surface energy of particles of the top electrode layer, the function comprising a relation between a stable structure and an unstable structure of the particles of the top electrode layer within the non-conductive layer.