发明名称 Acoustic wave device and method of fabricating the same
摘要 An acoustic wave device includes: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode facing each other across the piezoelectric film, at least one of the lower electrode and the upper electrode including a first conductive film and a second conductive film formed on the first conductive film; an insulating film sandwiched between the first conductive film and the second conductive film and having a temperature coefficient of an elastic constant opposite in sign to a temperature coefficient of an elastic constant of the piezoelectric film; and a third conductive film formed on edge surfaces of the insulating film and the second conductive film and causing electrical short circuits between the first conductive film and the second conductive film.
申请公布号 US9559291(B2) 申请公布日期 2017.01.31
申请号 US201314068485 申请日期 2013.10.31
申请人 TAIYO YUDEN CO., LTD. 发明人 Taniguchi Shinji;Nishihara Tokihiro
分类号 H01L41/047;H01L41/09;H03H9/15;H01L41/29;H03H9/02;H03H9/17;H03H3/02;H03H3/04 主分类号 H01L41/047
代理机构 Chen Yoshimura LLP 代理人 Chen Yoshimura LLP
主权项 1. An acoustic wave device comprising: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode facing each other across the piezoelectric film, the upper electrode including a first conductive film and a second conductive film formed on the first conductive film; an insulating film sandwiched between the first conductive film and the second conductive film and having a temperature coefficient of an elastic constant opposite in sign to a temperature coefficient of an elastic constant of the piezoelectric film; and a third conductive film formed on edge surfaces of the insulating film and the second conductive film and causing electrical short circuits between the first conductive film and the second conductive film, wherein an outer periphery of the piezoelectric film at an extracting wiring side of the lower electrode is located further in than an edge surface of the insulating film.
地址 Tokyo JP