Flip-chip LED, method for manufacturing the same and flip-chip package of the same

摘要

A flip-chip LED, a method for manufacturing the same and a flip-chip LED package are revealed. The LED includes at least one multi-layer reflective layer covered over the outermost layer thereof. The multi-layer reflective layer includes non-conductive reflective layer or combination of the non-conductive reflective layer with conductive reflective layer. The multi-layer reflective layer is manufactured by physical vapor deposition (PVD) with a mask at one time. The mask is used to form a pattern of the multi-layer reflective layer. Thus a photoresist layer is further formed on surface of exposed electrodes. Then a pumping and venting process is used only once during to complete vacuum deposition of each layer of the multi-layer reflective layer in turn.

主权项

1. A flip-chip LED comprising:
a sapphire substrate; an N-type ohmic contact layer formed and disposed on the substrate; a P-type ohmic contact layer formed and arranged at the N-type ohmic contact layer; a light emitting layer formed at an interface between the N-type ohmic contact layer and the P-type ohmic contact layer; a transparent conductive metal oxide layer formed and set on the P-type ohmic contact layer; two exposed electrodes with different polarities including a negative electrode and a positive electrode; and a multi-layer reflective layer covered over an outermost layer thereof; wherein the multi-layer reflective layer is manufactured by Physical Vapor Deposition (PVD) with a mask at one time to form each layer of the multi-layer reflective layer in turn on an outer surface of the flip-chip LED except the outer surface disposed with the exposed electrodes; wherein the mask is used to form a pattern of the multi-layer reflective layer so that a photoresist layer is disposed on surface of each of the two exposed electrodes with different polarities; then a pumping and venting process is used only once to form each layer of the multi-layer reflective layer in turn, and wherein the multi-layer reflective layer is formed by a non-conductive silicon dioxide (SiO2) film, a conductive aluminum film and a non-conductive silicon dioxide (SiO2) film; the conductive aluminum film is formed between the two non-conductive silicon dioxide (SiO2) films.