发明名称 |
Photovoltaic nanowire structures and related fabrication methods |
摘要 |
Nanowire-based photovoltaic energy conversion devices and related fabrication methods therefor are described. A plurality of photovoltaic (PV) nanowires extend outwardly from a surface layer of a substrate, each PV nanowire having a root end near the substrate surface layer and a tip end opposite the root end. For some embodiments, a collar material is formed that laterally surrounds and is in contact with the PV nanowires along a portion of one or more of their ends. According to some embodiments, the PV nanowires are formed on a crystalline silicon substrate. According to some other embodiments, the PV nanowires are formed on a roll-sourced continuous substrate. |
申请公布号 |
US9559231(B2) |
申请公布日期 |
2017.01.31 |
申请号 |
US201113821963 |
申请日期 |
2011.09.09 |
申请人 |
Wang Shih-Ping;Houng Yu-Min;Kobayashi Nobuhiko |
发明人 |
Wang Shih-Ping;Houng Yu-Min;Kobayashi Nobuhiko |
分类号 |
H01L31/0352;H01L21/02;H01L31/0392;H01L31/075;H01L31/18;H01L31/20 |
主分类号 |
H01L31/0352 |
代理机构 |
Cooper & Dunham LLP |
代理人 |
Cooper & Dunham LLP |
主权项 |
1. A photovoltaic energy conversion device comprising:
a substrate including an electrically conductive substrate surface layer doped in a first dopant type; a plurality of individually grown photovoltaic (PV) nanowires extending outwardly from the substrate surface layer, each of the plurality of individually grown PV nanowires having a root end near said substrate surface layer and a tip end opposite said root end, said substrate surface layer forming at least a portion of a root-side electrode layer of the device; a collar material crystallographically grown on and laterally surrounding the plurality of individually grown PV nanowires along at least a rootward portion of their lengths, the collar material doped in the first dopant type; a tip-side electrode material doped in a second dopant type, the tip-side electrode material being in contact with said tip ends of the plurality of individually grown PV nanowires; and an optically transparent, electrically insulating filler material directly laterally surrounding the plurality of individually grown PV nanowires along an outward portion of their lengths. |
地址 |
Los Altos CA US |