发明名称 Photovoltaic nanowire structures and related fabrication methods
摘要 Nanowire-based photovoltaic energy conversion devices and related fabrication methods therefor are described. A plurality of photovoltaic (PV) nanowires extend outwardly from a surface layer of a substrate, each PV nanowire having a root end near the substrate surface layer and a tip end opposite the root end. For some embodiments, a collar material is formed that laterally surrounds and is in contact with the PV nanowires along a portion of one or more of their ends. According to some embodiments, the PV nanowires are formed on a crystalline silicon substrate. According to some other embodiments, the PV nanowires are formed on a roll-sourced continuous substrate.
申请公布号 US9559231(B2) 申请公布日期 2017.01.31
申请号 US201113821963 申请日期 2011.09.09
申请人 Wang Shih-Ping;Houng Yu-Min;Kobayashi Nobuhiko 发明人 Wang Shih-Ping;Houng Yu-Min;Kobayashi Nobuhiko
分类号 H01L31/0352;H01L21/02;H01L31/0392;H01L31/075;H01L31/18;H01L31/20 主分类号 H01L31/0352
代理机构 Cooper & Dunham LLP 代理人 Cooper & Dunham LLP
主权项 1. A photovoltaic energy conversion device comprising: a substrate including an electrically conductive substrate surface layer doped in a first dopant type; a plurality of individually grown photovoltaic (PV) nanowires extending outwardly from the substrate surface layer, each of the plurality of individually grown PV nanowires having a root end near said substrate surface layer and a tip end opposite said root end, said substrate surface layer forming at least a portion of a root-side electrode layer of the device; a collar material crystallographically grown on and laterally surrounding the plurality of individually grown PV nanowires along at least a rootward portion of their lengths, the collar material doped in the first dopant type; a tip-side electrode material doped in a second dopant type, the tip-side electrode material being in contact with said tip ends of the plurality of individually grown PV nanowires; and an optically transparent, electrically insulating filler material directly laterally surrounding the plurality of individually grown PV nanowires along an outward portion of their lengths.
地址 Los Altos CA US