Field effect transistors and methods of forming same

摘要

Semiconductor devices and methods of forming the same are provided. A first source/drain layer is formed over a substrate. A channel layer is formed over the first source/drain layer. A second source/drain layer is formed over the channel layer. The first source/drain layer, the channel layer, and the second source/drain layer are patterned to form a fin-shaped structure. A gate stack is formed on a sidewall of the fin-shaped structure. The fin-shaped structure is patterned to expose a top surface of the first source/drain layer.

主权项

1. A method of forming a semiconductor device, the method comprising:
forming a first source/drain layer over a substrate; forming a channel layer over the first source/drain layer; forming a second source/drain layer over the channel layer; patterning the first source/drain layer, the channel layer, and the second source/drain layer to form a fin-shaped structure; forming a gate stack on a sidewall of the fin-shaped structure; and patterning the fin-shaped structure to expose a top surface of the first source/drain layer; and after the forming the gate stack, forming a dielectric layer over the first source/drain layer, the second source/drain layer, and the gate stack, the dielectric layer physically contacting the top surface of the first source/drain layer and a top surface of the second source/drain layer.