发明名称 |
Method and apparatus for an integrated capacitor |
摘要 |
An integrated capacitor can be fabricated with both electrodes formed by trenches for low resistance. According to one embodiment, the capacitor can comprise a first trench electrode, one or more dielectric layers, and a second trench electrode. The first trench electrode and the second trench electrode can be fabricated in different trenches to improve capacitance density and resistance of the integrated capacitor. |
申请公布号 |
US9559158(B2) |
申请公布日期 |
2017.01.31 |
申请号 |
US201614991078 |
申请日期 |
2016.01.08 |
申请人 |
THE HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY |
发明人 |
Sin Kin On Johnny;Wu Rongxiang;Fang Xiangming |
分类号 |
H01L49/02 |
主分类号 |
H01L49/02 |
代理机构 |
Amin, Turocy & Watson, LLP |
代理人 |
Amin, Turocy & Watson, LLP |
主权项 |
1. An apparatus, comprising:
a substrate comprising a dielectric layer; a first electrode comprising a conductive material formed in a first trench of the substrate, wherein the dielectric layer is situated between the first electrode and the substrate; and a second electrode comprising the conductive material formed in a second trench of the substrate, wherein the dielectric layer is situated between the second electrode and the substrate, resulting in a section of the substrate being situated between the dielectric layer of the first trench and the second trench. |
地址 |
Kowloon HK |