发明名称 Method and apparatus for an integrated capacitor
摘要 An integrated capacitor can be fabricated with both electrodes formed by trenches for low resistance. According to one embodiment, the capacitor can comprise a first trench electrode, one or more dielectric layers, and a second trench electrode. The first trench electrode and the second trench electrode can be fabricated in different trenches to improve capacitance density and resistance of the integrated capacitor.
申请公布号 US9559158(B2) 申请公布日期 2017.01.31
申请号 US201614991078 申请日期 2016.01.08
申请人 THE HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY 发明人 Sin Kin On Johnny;Wu Rongxiang;Fang Xiangming
分类号 H01L49/02 主分类号 H01L49/02
代理机构 Amin, Turocy & Watson, LLP 代理人 Amin, Turocy & Watson, LLP
主权项 1. An apparatus, comprising: a substrate comprising a dielectric layer; a first electrode comprising a conductive material formed in a first trench of the substrate, wherein the dielectric layer is situated between the first electrode and the substrate; and a second electrode comprising the conductive material formed in a second trench of the substrate, wherein the dielectric layer is situated between the second electrode and the substrate, resulting in a section of the substrate being situated between the dielectric layer of the first trench and the second trench.
地址 Kowloon HK