Method for manufacturing a substrate provided with different active areas and with planar and three-dimensional transistors

摘要

A substrate is successively provided with a support (7), an electrically insulating layer (8), and a semi-conductor material layer (2). A first protective mask (1) completely covers a second area (B) of the semi-conductor material layer and leaves a first area (A) of the semi-conductor material layer uncovered. A second etching mask (3) partially covers the first area (A) and at least partially covers the second area (B), so as to define and separate a first area and a second area. Lateral spacers are formed on the lateral surfaces of the second etching mask (3) so as to form a third etching mask. The semi-conductor material layer (2) is etched by means of the third etching mask so as to form a pattern made from semi-conductor material in the first area (A), the first etching mask (3) protecting the second area (B).

主权项

1. A method for producing a substrate comprising the following steps:
providing a substrate comprising:
a semi-conductor material layer,an insulation pattern passing through the semi-conductor material layer and arranged to separate and delineate a first area and a second area of the semi-conductor material layer,a first protective mask completely covering the second area of the semi-conductor material layer and leaving the first area of the semi-conductor material layer uncovered, anda second etching mask partially covering the first area and at least partially covering the second area, the first protective mask being disposed between the semi-conductor material layer and the second etching mask, forming lateral spacers on the lateral surfaces of the second etching mask and removing the second etching mask so as to form a third etching mask, the lateral spacers overlapping the first and second areas of the semi-conductor material layer, and etching the semi-conductor material layer by means of the third etching mask so as to form a pattern made from semi-conductor material in the first area, the first etching mask protecting the second area of the semiconductor material layer.