| 发明名称 | Methods of improving bump allocation for semiconductor devices and semiconductor devices with improved bump allocation | ||
| 摘要 | In a method of improving bump allocation for a semiconductor device and a semiconductor device with improved bump allocation, a predetermined signal bump is surrounded with at least three bumps, each being a ground bump or a paired differential signal bump. | ||
| 申请公布号 | US9557370(B2) | 申请公布日期 | 2017.01.31 |
| 申请号 | US201213371120 | 申请日期 | 2012.02.10 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. | 发明人 | Kuo Yung-Hsin |
| 分类号 | H01L21/66;G01R31/28;H01L23/50;G06F17/50;H01L23/00;H01L25/00 | 主分类号 | H01L21/66 |
| 代理机构 | Hauptman Ham, LLP | 代理人 | Hauptman Ham, LLP |
| 主权项 | 1. A method of improving bump allocation for a semiconductor device, said method comprising: receiving a bump pattern of a plurality of bumps to be formed as electrical connections for the semiconductor device; identifying in the bump pattern at least one signal bump; and modifying the bump pattern to arrange at least three ground bumps around and immediately adjacent the signal bump, each said ground bump configured to receive a ground voltage during operation or probing of the semiconductor device, wherein modifying the bump pattern comprises moving a preexisting ground bump of the received bump pattern to a position immediately adjacent the signal bump to define one of the at least three ground bumps. | ||
| 地址 | TW | ||