SiC high temperature pressure transducer

摘要

The invention concerns a pressure transducer comprising a deflecting membrane, said membrane comprising two piezoresistors (10, 11) of different types, said piezoresistors being arranged such that a same stress or a same strain is applied on said piezoresistors and said piezoresistors (10, 11) yield changes in resistance, wherein a piezoresistor of a first type (10) is positioned such that its current direction is perpendicular to the stress direction (trans verse) and a piezoresistor of a second type is parallel to the stress direction (longitudinal), allowing, when a tensile stress is applied to the transducer, said piezoresistor of the first type to increase its resistance and said piezoresistor of the second type to decrease the resistance; or when a compressive stress is applied to the transducer, said piezoresistor of the first type to decrease its resistance and said piezoresistor of the second type to increase the resistance; wherein said piezoresistor of the first type (10) has a specific width and a length as short as possible and said piezoresistor (11) of the second type has a width as short as possible and a length as long as possible.

主权项

1. A pressure transducer comprising:
a deflecting membrane, said membrane comprising at least two piezoresistors of different types, said piezoresistors being arranged such that (i) a same stress or a same strain, in both magnitude and sign, is applied on said piezoresistors, and (ii) said piezoresistors yield changes in resistance, wherein a piezoresistor of a first type is positioned such that its current direction is perpendicular to the stress direction and a piezoresistor of a second type is positioned such that its current direction is parallel to the stress direction, such that when a tensile stress is applied to the transducer, said piezoresistor of the first type increases its resistance and said piezoresistor of the second type decreases its resistance, or said piezoresistor of the first type decreases its resistance and said piezoresistor of the second type increases its resistance.