发明名称 |
Punch through stopper in bulk finFET device |
摘要 |
A method of forming a semiconductor device that includes forming a fin structure from a bulk semiconductor substrate and forming an isolation region contacting a lower portion of a sidewall of the fin structure, wherein an upper portion of the sidewall of the fin structure is exposed. A sacrificial spacer is formed on the upper portion of the sidewall of the fin structure. The isolation regions are recessed to provide an exposed section of the sidewall of the fin structure. A doped semiconductor material is formed on the exposed section of the lower portion of the sidewall of the fin structure. Dopant is diffused from the doped semiconductor material to a base portion of the fin structure. |
申请公布号 |
US9559191(B2) |
申请公布日期 |
2017.01.31 |
申请号 |
US201414578842 |
申请日期 |
2014.12.22 |
申请人 |
International Business Machines Corporation |
发明人 |
Basker Veeraraghavan S.;Liu Zuoguang;Yamashita Tenko;Yeh Chun-Chen |
分类号 |
H01L29/66;H01L29/78 |
主分类号 |
H01L29/66 |
代理机构 |
Tutunjian & Bitetto, P.C. |
代理人 |
Tutunjian & Bitetto, P.C. ;Alexanian Vazken |
主权项 |
1. A method for forming a semiconductor device comprising:
forming a fin structure from a bulk semiconductor substrate; forming an isolation region contacting a lower portion of a sidewall of the fin structure, wherein an upper portion of the sidewall of the fin structure is exposed; forming a gate structure on a channel region portion of the fin structure after said forming the isolation region; forming a sacrificial spacer on the upper portion of the sidewall of the fin structure after forming the gate structure; recessing the isolation region to provide an exposed section of the lower portion of the sidewall of the fin structure; forming a doped semiconductor material on the exposed section of the fin structure; and diffusing dopant from the doped semiconductor material to a base portion of the fin structure. |
地址 |
Armonk NY US |