Image sensor and method of fabricating the same

摘要

Example embodiments disclose an image sensor and a fabricating method thereof. An image sensor may include a semiconductor layer with a light-receiving region and a light-blocking region, the semiconductor layer including photoelectric conversion devices, a light-blocking layer on a surface of the semiconductor layer, color filters on the semiconductor layer and the light-blocking layer, and micro lenses on the color filters. The color filters are absent from an interface region between the light-receiving region and the light-blocking region.

主权项

1. An image sensor, comprising:
a semiconductor layer having a light-receiving region and a light-blocking region, the semiconductor layer including photoelectric conversion devices; a light-blocking layer on a surface of the semiconductor layer and on the light-blocking region; color filters on the semiconductor layer and the light-blocking layer; and micro lenses on the color filters, the color filters being absent from an interface region, the interface region being between the light-receiving region and the light-blocking region.