发明名称 Integrated scintillator grid with photodiodes
摘要 Various embodiments of a structure implemented in an X-ray imaging system are described. In one aspect, a structure implemented in an X-ray imaging system includes a silicon wafer including a first side and a second side opposite the first side. The silicon wafer also includes an array of photodiodes on the first side of the silicon wafer with the photodiodes electrically isolated from each other as well as an array of grid holes on the second side of the silicon wafer. Each grid hole of the array of grid holes is aligned with a respective photodiode of the array of photodiodes. The structure also includes a layer of scintillating material disposed over the array of grid holes on the second side of the silicon wafer. The structure further includes a layer of reflective material disposed on the layer of scintillating material.
申请公布号 US9559139(B2) 申请公布日期 2017.01.31
申请号 US201514863748 申请日期 2015.09.24
申请人 TERAPEDE SYSTEMS INC. 发明人 Vora Madhukar B.;Rodricks Brian
分类号 G01T1/20;H01L27/146;H01L27/12 主分类号 G01T1/20
代理机构 Stevens Law Group 代理人 Stevens David R.;Stevens Law Group
主权项 1. A structure implemented in an X-ray imaging system, comprising: a silicon wafer having a first side and a second side opposite the first side, the silicon wafer comprising: an array of pixels, each of the pixels comprising a photo pixel connected to a sense pixel, wherein the photo pixel further comprises a photodiode on the first side of the silicon wafer aligned with an optical guide on the second side of the silicon wafer, wherein the optical guide comprises a grid hole having a sidewall coated with a layer of refractive material, and wherein the sense pixel further comprises a sensing circuit for an electrical signal caused by light absorbed by the respective photo pixel;a layer of scintillating material disposed over the optical guides on the second side of the silicon wafer; anda layer of reflective material disposed on the layer of scintillating material.
地址 Campbell CA US