Solid-state image capture device

摘要

A semiconductor substrate is provided with a plurality of photosensitive regions on a first principal surface side. An insulating film has a third principal surface and a fourth principal surface opposed to each other, and is arranged on the semiconductor substrate so that the third principal surface is opposed to the first principal surface. A cross section parallel to a thickness direction of the semiconductor substrate, of a region corresponding to each photosensitive region in the first principal surface is a corrugated shape in which concave curves and convex curves are alternately continuous. A cross section parallel to a thickness direction of the insulating film, of a region corresponding to each photosensitive region in the third principal surface is a corrugated shape in which concave curves and convex curves are alternately continuous corresponding to the first principal surface. The fourth principal surface is flat.

主权项

1. A solid-state imaging device comprising:
a semiconductor substrate having a first principal surface and a second principal surface opposed to each other, and provided with a plurality of photosensitive regions on the first principal surface side, the first principle surface being a light incident surface of the semiconductor substrate; and an antireflection film having a third principal surface and a fourth principal surface opposed to each other, and arranged on the semiconductor substrate so that the third principal surface is opposed to the first principal surface, the fourth principle surface being a light incident surface of the antireflection film, wherein a cross section parallel to a thickness direction of the semiconductor substrate, of a region corresponding to each said photosensitive region in the first principal surface of the semiconductor substrate is a corrugated shape in which concave curves and convex curves are alternately continuous, wherein a cross section parallel to a thickness direction of the antireflection film, of a region corresponding to each said photosensitive region in the third principal surface of the antireflection film is a corrugated shape in which concave curves and convex curves are alternately continuous corresponding to the first principal surface, wherein the fourth principal surface of the antireflection film is flat, wherein the solid-state imaging device is a front-illuminated type, and the semiconductor substrate includes a substrate region of a first conductivity type and a plurality of semiconductor regions of a second conductivity type, each constituting the corresponding photosensitive region; and a cross section parallel to a thickness direction of the semiconductor substrate, of pn junction planes between the substrate region and the semiconductor regions are corrugated shapes in which concave curves and convex curves are alternately continuous corresponding to the first principal surface.