发明名称 Defect logging in nonvolatile memory
摘要 A method of operating a nonvolatile memory block includes reading data from physical units in the block and determining individual error rates for data from the physical units. The error rate data is stored. This is repeated over multiple iterations and aggregated stored error rates are used to identify bad physical units in the block.
申请公布号 US9558847(B2) 申请公布日期 2017.01.31
申请号 US201414550290 申请日期 2014.11.21
申请人 SanDisk Technologies LLC 发明人 Tuers Daniel;Manohar Abhijeet
分类号 G11C29/00;G11C29/38;G11C29/42;G11C29/44;G11C16/00 主分类号 G11C29/00
代理机构 Stoel Rives LLP 代理人 Stoel Rives LLP
主权项 1. An apparatus comprising: an individually erasable physical block of nonvolatile memory cells; a plurality of physical units in the individually erasable block; an error detection circuit configured to obtain individual error rates for data from the plurality of physical units; an error log configured to store the individual error rates for the data from the plurality of physical units; and a persistent error identification circuit configured to identify one or more physical units in the individually erasable physical block as bad and not for subsequent storage of user data while other physical units in the individually erasable physical block that are not identified as bad remain available for subsequent storage of user data, the the persistent error identification circuit configured to aggregate stored individual error rates from the error log over two or more write-erase cycles to identify the bad physical units.
地址 Plano TX US