Semiconductor device

摘要

A semiconductor device capable of reconfiguration, including a plurality of logic units which are connected to each other by an address line or a data line, wherein each of the logic units includes: a plurality of address lines; a plurality of data lines; a clock signal line to receive a system clock signal; a first and a second memory cell units which operate synchronously with the clock signal; a first address decoder which decodes an address signal and outputs a decode signal to the first memory cell unit; a second address decoder which decodes an address signal and outputs a decode signal to the second memory cell unit; and an address transition detection unit which generates an internal clock signal and outputs the internal clock signal to the first memory cell unit, when a transition of the address signal input from the plurality of address lines is detected, wherein the first memory cell unit operates synchronously with the internal clock signal, and the second memory cell unit operates synchronously with the system clock signal.

主权项

1. A semiconductor device capable of reconfiguration, characterized by comprising a plurality of logic units which are connected to each other by an address line or a data line, wherein
each of the logic units includes: a plurality of address lines; a plurality of data lines; a clock signal line to receive a system clock signal; a first and a second memory cell units which operate synchronously with the clock signal; a first address decoder which decodes an address signal and outputs a decode signal to the first memory cell unit; a second address decoder which decodes an address signal and outputs a decode signal to the second memory cell unit; and an address transition detection unit which generates an internal clock signal and outputs the internal clock signal to the first memory cell unit, when a transition of the address signal input from the plurality of address lines is detected, whereinthe first memory cell unit operates synchronously with the internal clock signal, and the second memory cell unit operates synchronously with the system clock signal.