发明名称 Photoresist composition and associated method of forming an electronic device
摘要 A photoresist composition includes a first polymer in which at least half of the repeat units are photoacid-generating repeat units, and a second polymer that exhibits a change in solubility in an alkali developer under the action of acid. In the first polymer, each of the photoacid-generating repeat units comprises photoacid-generating functionality and base-solubility-enhancing functionality.
申请公布号 US9557642(B2) 申请公布日期 2017.01.31
申请号 US201514833284 申请日期 2015.08.24
申请人 ROHM AND HAAS ELECTRONIC MATERIALS LLC 发明人 LaBeaume Paul J.;Jain Vipul;Coley Suzanne M.;Thackeray James W.;Cameron James F.;Kwok Amy M.;Valeri David A.
分类号 G03F7/004;G03F7/038;G03F7/20;G03F7/32;C07C309/12;C07C381/12;C08F220/18;C08F220/24;C08F220/28;C08F220/38;G03F7/039;G03F7/16;H01L21/027 主分类号 G03F7/004
代理机构 Cantor Colburn LLP 代理人 Cantor Colburn LLP
主权项 1. A photoresist composition comprising: a first polymer comprising, based on 100 mole percent of total repeat units, 60 to 100 mole percent of photoacid-generating repeat units; wherein each of the photoacid-generating repeat units comprises an anion, a photoacid-generating cation, and base-solubility-enhancing functionality; wherein either the anion or the photoacid-generating cation is polymer-bound; wherein the base-solubility-enhancing functionality is selected from the group consisting of tertiary carboxylic acid esters, secondary carboxylic acid esters wherein the secondary carbon is substituted with at least one unsubstituted or substituted C6-40 aryl, acetals, ketals, lactones, sultones, alpha-fluorinated esters, beta-fluorinated esters, alpha,beta-fluorinated esters, polyalkyleneglycols, alpha-fluorinated alcohols, and combinations thereof; and wherein each of the photoacid-generating repeat units independently has the structure wherein m is independently in each photoacid-generating repeat unit 0 or 1;n is independently in each of the repeat units 0 or 1;q is independently in each photoacid-generating repeat unit 0, 1, 2, 3, 4, or 5;r is independently at each occurrence in each photoacid-generating repeat unit 0, 1, 2, 3, or 4;L1 is independently at each occurrence an unsubstituted or substituted C1-20 hydrocarbylene, wherein the substituted C1-20 hydrocarbylene can, optionally, comprise one or more in-chain divalent heteroatom-containing groups that is —O—, —S—, —NR4, —PR4—, —C(O)—, —OC(O)O—, —N(R4)C(O)—, —C(O)N(R4)—, —OC(O)N(R4)—, —N(R4)C(O)O—, —S(O)—, —S(O)2—, —N(R4)S(O)2—, —S(O)2N(R4)—, —OS(O)2—, or —S(O)2O—, wherein R4 is H or C1-12hydrocarbyl;L2 is independently at each occurrence —O—, —C(O)—, or —N(R5)—, wherein R5 is H or C1-12 hydrocarbyl;L3 is independently at each occurrence an unsubstituted or substituted C1-20hydrocarbylene, wherein the substituted C1-20 hydrocarbylene can, optionally, comprise one or more in-chain divalent heteroatom-containing groups that is —O—, —S—, —NR4, —PR4—, —C(O)—, —OC(O)O—, —N(R4)C(O)—, —C(O)N(R4)—, —OC(O)N(R4)—, —N(R4)C(O)O—, —S(O)—, —S(O)2—, —N(R4)S(O)2—, —S(O)2N(R4)—, —OS(O)2, or —S(O)2O—, wherein R4 is H or C1-12 hydrocarbyl;R1 is independently at each occurrence in each photoacid-generating repeat unit halogen, unsubstituted or substituted C1-40 hydrocarbyl, or unsubstituted or substituted C1-40 hydrocarbylene;R3 is independently at each occurrence H, F, —CN, C1-10 alkyl, or C1-10fluoroalkyl;X is independently in each photoacid-generating repeat unit a single bond, —O—, —S—, —C(═O)—, —C(R2)2—, —C(R2)(OH)—, —C(═O)O—, —C(=O)N(R2)—, —C(═O)C(═O)—, —S(═O)—, or —S(═O)2—, wherein R2 is independently at each occurrence hydrogen or C1-12 hydrocarbyl; and a second polymer that exhibits a change in solubility in an alkali developer under the action of acid.
地址 Marlborough MA US