Ferro-electric device and modulatable injection barrier

摘要

Described is a modulatable injection barrier and a semiconductor element comprising same. More particularly, the invention relates to a two-terminal, non-volatile programmable resistor. Such a resistor can be applied in non-volatile memory devices, and as an active switch e.g. in displays. The device comprises, in between electrode layers, a storage layer comprising a blend of a ferro-electric material and a semiconductor material. Preferably both materials in the blend are polymers.

主权项

1. A semiconductor element comprising at least one modulatable injection barrier, said barrier being formed between a first electrode layer of a first electrode and a semiconductor layer, wherein the semiconductor layer is interposed between the first electrode and a second electrode,
wherein the semiconductor layer comprises a blend of a semiconductor polymer and a ferro-electric dielectric polymer, the blend comprising:
a ferro-electric dielectric polymer structure, extending between the first and second electrodes, and the ferro-electric dielectric polymer being in an amount within the blend sufficient to allow that a polarization charge can be measured, anda semiconductor polymer path, extending between the first and second electrodes, for travel of charge carriers flowing as a current through the semiconductor layer between the first and second electrodes, wherein the semiconductor layer is made up primarily of the ferro-electric dielectric polymer structure, and the semiconductor polymer path comprises portions of the semiconductor layer wherein holes within the ferro-electric dielectric polymer structure are filled with semiconductor polymer material providing a continuous semiconductor path between the first electrode and second electrode.