Transistors and methods of forming transistors

摘要

Some embodiments include a transistor having a drain region and a source region. A conductive gate is between the source and drain regions. First channel material is between the gate and the source region. The first channel material is spaced from the gate by one or more insulative materials. Second channel material is between the first channel material and the source region, and directly contacts the source region. The first and second channel materials are transition metal chalcogenide. One of the source and drain regions is a hole reservoir region and the other is an electron reservoir region. Tunnel dielectric material may be between the first and second channel materials.

主权项

1. A transistor comprising:
a source region and a drain region; one of the source and drain regions being a hole reservoir region and the other being an electron reservoir region; a gate between the source and drain regions, the gate comprising metal; first channel material between the gate and the source region; the first channel material being spaced from the gate by one or more insulative materials; second channel material between the first channel material and the source region, and directly contacting the source region; and wherein the first and second channel materials are transition metal dichalcogenide and/or transition metal trichalcogenide, and are different compositions relative to one another.