| 发明名称 | Semiconductor structure and manufacturing method thereof | ||
| 摘要 | A semiconductor structure includes a substrate and a metal gate. The metal gate includes a metallic filling layer and disposed over the substrate. The semiconductor structure further includes a dielectric material over the metallic filling layer and separating the metallic filling layer from a conductive trace. The conductive trace is over the dielectric material. The semiconductor structure further includes a conductive plug extending longitudinally through the dielectric material and ending with a lateral encroachment inside the metallic filling layer along a direction. The lateral direction is substantially perpendicular to the longitudinal direction of the conductive plug. | ||
| 申请公布号 | US9559190(B2) | 申请公布日期 | 2017.01.31 |
| 申请号 | US201514835291 | 申请日期 | 2015.08.25 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. | 发明人 | Chen Chien-Hung;Liu Shen-Chieh;Chen Hobin;Wu Wen-Lang;Tsuei Cherng-Chang |
| 分类号 | H01L29/66;H01L29/78;H01L29/49;H01L21/02;H01L21/311;H01L21/3213;H01L21/768;H01L29/51 | 主分类号 | H01L29/66 |
| 代理机构 | WPAT, P.C., Intellectual Property Attorneys | 代理人 | WPAT, P.C., Intellectual Property Attorneys ;King Anthony |
| 主权项 | 1. A semiconductor structure, comprising: a substrate; a metal gate including a metallic filling layer and disposed over the substrate; a dielectric material over the metallic filling layer and separating the metallic filling layer from a conductive trace over the dielectric material; and a conductive plug extending longitudinally through the dielectric material and ending with a lateral encroachment inside the metallic filling layer along a lateral direction substantially perpendicular to the longitudinal direction of the conductive plug. | ||
| 地址 | Hsinchu TW | ||