发明名称 Semiconductor device packages, packaging methods, and packaged semiconductor devices
摘要 Semiconductor device packages, packaging methods, and packaged semiconductor devices are disclosed. In some embodiments, a package for a semiconductor device includes an integrated circuit die mounting region and a molding material around the integrated circuit die mounting region. An interconnect structure is over the molding material and the integrated circuit die mounting region. A protection pattern is in a perimeter region of the package around the interconnect structure. The protection pattern includes a first conductive feature that is vertical within the package near a second conductive feature. The first conductive feature has a first width, and the second conductive feature has a second width. The second width is greater than the first width.
申请公布号 US9558966(B2) 申请公布日期 2017.01.31
申请号 US201514755700 申请日期 2015.06.30
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Chen Hsien-Wei;Wu Chi-Hsi;Yu Chen-Hua;Yeh Der-Chyang;Wu Wei-Cheng;Tseng Chien-Fu
分类号 H01L23/28;H01L21/56;H01L21/78;H01L21/683;H01L21/768;H01L23/12;H01L23/00;H01L23/31;H01L23/58;H01L23/498;H01L23/538;H01L23/544;H01L25/065;H01L25/10 主分类号 H01L23/28
代理机构 Slater Matsil, LLP 代理人 Slater Matsil, LLP
主权项 1. A package for a semiconductor device, comprising: an integrated circuit die mounting region; a molding material disposed around the integrated circuit die mounting region; an interconnect structure disposed over the molding material and the integrated circuit die mounting region; and a protection pattern disposed over and outside the molding material in a perimeter region of the package around the interconnect structure, wherein the protection pattern comprises a first conductive feature disposed vertically within the package proximate a second conductive feature, wherein the first conductive feature and the second conductive feature inside the protection pattern are electrically isolated from conductive features outside the protection pattern, wherein the first conductive feature comprises a first width, wherein the second conductive feature comprises a second width, the second width being greater than the first width, wherein the first width and the second width are measured orthogonally to the first conductive feature disposed vertically.
地址 Hsin-Chu TW