发明名称 |
Cavity pressure modification using local heating with a laser |
摘要 |
A method and system for changing a pressure within at least one enclosure in a MEMS device are disclosed. In a first aspect, the method comprises applying a laser through one of the at least two substrates onto a material which changes the pressure within at least one enclosure when exposed to the laser, wherein the at least one enclosure is formed by the at least two substrates. In a second aspect, the system comprises a MEMS device that includes a first substrate, a second substrate bonded to the first substrate, wherein at least one enclosure is located between the first and the second substrates, a metal layer within one of the first substrate and the second substrate, and a material vertically oriented over the metal layer, wherein when the material is heated the material changes a pressure within the at least one enclosure. |
申请公布号 |
US9556019(B2) |
申请公布日期 |
2017.01.31 |
申请号 |
US201514705630 |
申请日期 |
2015.05.06 |
申请人 |
INVENSENSE, INC. |
发明人 |
Dueweke Michael;Lim Martin |
分类号 |
H01L29/84;B81C1/00;B81B7/00 |
主分类号 |
H01L29/84 |
代理机构 |
Amin, Turocy & Watson, LLP |
代理人 |
Amin, Turocy & Watson, LLP |
主权项 |
1. A method for changing a pressure within at least one enclosure in a microelectromechanical systems (MEMS) device, the method comprising:
applying a laser through one of at least two substrates onto a material that changes the pressure within at least one enclosure when exposed to the laser, wherein the at least one enclosure is formed by a MEMS substrate and a complementary metal-oxide-semiconductor (CMOS) substrate of the at least two substrates, and wherein the material is disposed on a metal layer of at least one of the MEMS substrate or the CMOS substrate; and reflecting at least a portion of incident laser light from the laser with the metal layer back onto the material. |
地址 |
San Jose CA US |