发明名称 Image sensor and methods of manufacturing the same
摘要 An image sensor includes a first substrate, a photodiode array, a first wiring structure, a second wiring structure, a third wiring structure and a light blocking layer pattern. The photodiode array is disposed in the first substrate. The photodiode array includes first photodiodes in a first region, second photodiodes in a second region and third photodiodes in a third region. The first wiring structure is disposed in the first region. The first wiring structure is electrically connected to the first photodiodes. The second wiring structure is disposed in the second region. The second wiring structure includes power supply wiring. The third wiring structure is disposed in the third region. The third wiring structure is electrically connected to the third photodiodes. The light blocking layer pattern is disposed on the first substrate. The light blocking layer pattern covers the third region and the fourth region.
申请公布号 US9559138(B2) 申请公布日期 2017.01.31
申请号 US201514878631 申请日期 2015.10.08
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 Kim Yi-Tae;Lee Kyung-Ho;Jang Dong-Young;Choi Sung-Ho
分类号 H01L31/062;H01L31/113;H01L21/44;H01L21/48;H01L21/50;H01L27/146 主分类号 H01L31/062
代理机构 F. Chau & Associates, LLC 代理人 F. Chau & Associates, LLC
主权项 1. An image sensor, comprising: a first substrate having a first surface and a second surface opposed to the first surface, the first substrate being divided into a first region, a second region surrounding the first region, a third region surrounding the second region and a fourth region surrounding the third region; a photodiode array disposed in the first substrate adjacent to the first surface, the photodiode array including first photodiodes in the first region, second photodiodes in the second region and third photodiodes in the third region; a first wiring structure disposed in the first region on the first surface of the first substrate, the first wiring structure being electrically connected to the first photodiodes; a second wiring structure disposed in the second region on the first surface of the first substrate, the second wiring structure including a power supply wiring; a third wiring structure disposed in the third region on the first surface of the first substrate, the third wiring structure being electrically connected to the third photodiodes; and a light blocking layer pattern disposed on the second surface of the first substrate, the light blocking layer pattern covering the third region and the fourth region.
地址 Suwon-si, Gyeonggi-do KR