Integrated circuit cooling using embedded peltier micro-vias in substrate

摘要

A semiconductor device package and method for manufacturing the same, includes a semiconductor substrate including a plurality of embedded thermoelectric couples. The embedded thermoelectric couples can be in trenches and extend partially into the substrate from the handle side of the substrate. An n-type pillar and a p-type pillar are electrically connected using a conducting contact plate to form each of the partially embedded thermoelectric couples. A series connection layer electrically connects the plurality of thermoelectric couples on the handle side. A power source provides electrical current to the series connection layer allowing current to flow through the plurality of the series connected thermoelectric couples. A heat sink is positioned adjacent to the connected thermoelectric couples for transferring heat away from the device side to the heat sink using the thermoelectric couples.

主权项

1. A semiconductor device package, which comprises:
a plurality of thermoelectric couples embedded in a semiconductor substrate of a semiconductor device, the thermoelectric couples each including thermoelectric pillars positioned opposite one another and extending into the substrate from a handle side of the substrate being opposite from a device side of the substrate; the pillars extending partially into the substrate from the handle side of the substrate, the opposing pillars being N type and P type, respectively; a thermally conducting isolation layer along a perimeter of the trenches and along outer sides of the pillars; a conductive plate electrically connecting the n type and p type pillars; a series connection layer electrically connecting the plurality of thermoelectric couples on the handle side of the substrate for receiving a voltage via the series connection layer, the thermally conducting isolation layer contacting the series connection layer; and a heat sink positioned adjacent to the thermoelectric couples for transferring heat away from the device side of the substrate to the heat sink using the thermoelectric couples.