发明名称 Solar cell emitter region fabrication using silicon nano-particles
摘要 Methods of fabricating solar cell emitter regions using silicon nano-particles and the resulting solar cells are described. In an example, a method of fabricating an emitter region of a solar cell includes forming a region of doped silicon nano-particles above a dielectric layer disposed above a surface of a substrate of the solar cell. A layer of silicon is formed on the region of doped silicon nano-particles. At least a portion of the layer of silicon is mixed with at least a portion of the region of doped silicon nano-particles to form a doped polycrystalline silicon layer disposed on the dielectric layer.
申请公布号 US9559246(B2) 申请公布日期 2017.01.31
申请号 US201514945047 申请日期 2015.11.18
申请人 SunPower Corporation 发明人 Loscutoff Paul;Smith David D.;Morse Michael;Waldhauer Ann;Kim Taeseok;Molesa Steven Edward
分类号 H01L31/028;H01L31/0376;H01L31/18;H01L31/0352;H01L31/0224;H01L31/0236;H01L31/0368;H01L31/0384;H01L31/068 主分类号 H01L31/028
代理机构 Blakely Sokoloff Taylor Zafman LLP 代理人 Blakely Sokoloff Taylor Zafman LLP
主权项 1. A method of fabricating an emitter region of a solar cell, the method comprising: forming a region of doped nano-particles above a dielectric layer disposed above a surface of a substrate of the solar cell; forming a layer of semiconductor material on the region of doped nano-particles, wherein forming the layer of semiconductor material comprises forming a layer of un-doped, intrinsic, or lightly doped amorphous semiconductor material in a low pressure chemical vapor deposition (LPCVD) chamber at a temperature approximately in the range of 525-565 degrees Celsius; and mixing at least a portion of the layer of semiconductor material with at least a portion of the region of doped nano-particles to form a doped polycrystalline semiconductor material layer disposed on the dielectric layer.
地址 San Jose CA US