发明名称 |
Solar cell emitter region fabrication using silicon nano-particles |
摘要 |
Methods of fabricating solar cell emitter regions using silicon nano-particles and the resulting solar cells are described. In an example, a method of fabricating an emitter region of a solar cell includes forming a region of doped silicon nano-particles above a dielectric layer disposed above a surface of a substrate of the solar cell. A layer of silicon is formed on the region of doped silicon nano-particles. At least a portion of the layer of silicon is mixed with at least a portion of the region of doped silicon nano-particles to form a doped polycrystalline silicon layer disposed on the dielectric layer. |
申请公布号 |
US9559246(B2) |
申请公布日期 |
2017.01.31 |
申请号 |
US201514945047 |
申请日期 |
2015.11.18 |
申请人 |
SunPower Corporation |
发明人 |
Loscutoff Paul;Smith David D.;Morse Michael;Waldhauer Ann;Kim Taeseok;Molesa Steven Edward |
分类号 |
H01L31/028;H01L31/0376;H01L31/18;H01L31/0352;H01L31/0224;H01L31/0236;H01L31/0368;H01L31/0384;H01L31/068 |
主分类号 |
H01L31/028 |
代理机构 |
Blakely Sokoloff Taylor Zafman LLP |
代理人 |
Blakely Sokoloff Taylor Zafman LLP |
主权项 |
1. A method of fabricating an emitter region of a solar cell, the method comprising:
forming a region of doped nano-particles above a dielectric layer disposed above a surface of a substrate of the solar cell; forming a layer of semiconductor material on the region of doped nano-particles, wherein forming the layer of semiconductor material comprises forming a layer of un-doped, intrinsic, or lightly doped amorphous semiconductor material in a low pressure chemical vapor deposition (LPCVD) chamber at a temperature approximately in the range of 525-565 degrees Celsius; and mixing at least a portion of the layer of semiconductor material with at least a portion of the region of doped nano-particles to form a doped polycrystalline semiconductor material layer disposed on the dielectric layer. |
地址 |
San Jose CA US |